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2SK1405
Silicon N Channel MOS FET
REJ03G0945-0300 Rev.3.00 May 15, 2006
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
D G 1. Gate 2. Drain 3. Source
S 1
2
3
Rev.3.00 May 15, 2006 page 1 of 6
2SK1405
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 600 30 15 60 15 60 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 30 -- -- 2.0 -- 9 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.35 14 3150 780 110 35 120 240 100 1.0 140 Max -- -- 10 250 3.0 0.50 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V *3 ID = 8 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 8 A, VGS = 10 V, RL = 3.75
IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 100 A/s
Rev.3.00 May 15, 2006 page 2 of 6
2SK1405
Main Characteristics
Power vs. Temperature Derating
80
Maximum Safe Operation Area
100 30
ea ar is (on) th n DS iR n PW tio by ra d pe mite = O li 10 DC is
Channel Dissipation Pch (W)
60
Drain Current ID (A)
10 3 1 0.3 0.1 0.03 0.01
40
20
1 10 0 s 0 s 1 m s m Op s( er 1 at ion Sho tp (T uls C= 25 e) C )
Ta = 25C 1 3 10 30 100 300 1,000
0
50
100
150
200
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 10 V 6V 5V Pulse Test 12 4.5 V 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
16
16
12
8
8
4
VGS = 4 V
4
TC = 75C 25C -25C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test 8 20 A
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 Pulse Test 2 1 0.5 0.2 0.1 0.05 1 2 5 10 20 50 100 VGS = 10, 15 V
Drain to Source Saturation Voltage VDS (on) (V)
6
4
10 A ID = 5 A
2
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance RDS (on) ()
Drain Current ID (A)
Rev.3.00 May 15, 2006 page 3 of 6
2SK1405
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
2.0 Pulse Test 1.6 50
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
20 10 5 2 1 0.5 0.2
TC = -25C 25C 75C
1.2 10 A 0.8 ID = 20 A VGS = 10 V 5A
0.4
VDS = 10 V Pulse Test 0.5 1 2 5 10 20
0 -40
0
40
80
120
160
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
500 10,000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss
Capacitance C (pF)
200 100 50
1,000 Coss 100
20 10 5 0.2 di/dt = 100 A/s, VGS = 0 Ta = 25C Pulse Test 0.5 1 2 5 10 20
VGS = 0 f = 1 MHz 10 0 10 20 30
Crss
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
1,000 VDD = 100 V 250 V 400 V VGS 20 500
Switching Characteristics
td (off)
Switching Time t (ns)
800
16
200 tf 100 50 tr td (on)
600
12
400
VDS
ID = 15 A VDD = 400 V 250 V 100 V
8
20 10 5 0.2 VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 % 0.5 1 2 5 10 20
200
4 0
0
40
80
120
160
200
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 May 15, 2006 page 4 of 6
2SK1405
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
Pulse Test
16
12
8
VGS = 0, -5 V
10 V
4
0 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
0.02
ch - c (t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C PDM
pu lse
D= PW T
0.03
0.0
PW T
1
1s
t ho
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor D.U.T. RL Vout Vin 10 V 50 VDD = 30 V td(on) 10% Vout Monitor Vin 10%
Waveform
90%
10%
90% tr
90% td(off) tf
Rev.3.00 May 15, 2006 page 5 of 6
2SK1405
Package Dimensions
Package Name TO-3PFM JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV MASS[Typ.] 5.2g
Unit: mm
5.5 0.3
15.6 0.3 3.2
+ 0.4 - 0.2
5.0 0.3 5.0 0.3 19.9 0.3 2.7 0.3
2.0 0.3
0.66 5.45 0.5
+ 0.2 - 0.1
21.0 0.5
4.0 0.3 2.6 0.86
3.2 0.3 1.6 0.86
0.2 0.9 + 0.1 -
5.45 0.5
Ordering Information
Part Name 2SK1405-E Quantity 360 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 May 15, 2006 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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